SI7374DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Width :

5.89mm

Terminal Form :

C BEND

Pbfree Code :

yes

Series :

TrenchFET®

Drain-source On Resistance-Max :

0.0055Ohm

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 15V

Package / Case :

PowerPAK® SO-8

Mounting Type :

Surface Mount

Power Dissipation-Max :

5W Ta 56W Tc

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

JESD-30 Code :

R-XDSO-C5

Terminal Finish :

Pure Matte Tin (Sn)

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Continuous Drain Current (ID) :

24A

Drain Current-Max (Abs) (ID) :

23.8A

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Published :

2015

FET Type :

N-Channel

Number of Terminations :

5

Mount :

Surface Mount

Pin Count :

8

Height :

1.04mm

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Fall Time (Typ) :

10 ns

Length :

4.9mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Turn-Off Delay Time :

42 ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 23.8A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Weight :

506.605978mg