SI7370DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Nominal Vgs :

4 V

Drain to Source Breakdown Voltage :

60V

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

1.04mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4V

Element Configuration :

Single

Terminal Form :

C BEND

Drain Current-Max (Abs) (ID) :

9.6A

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

11m Ω @ 12A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

9.6A Ta

Power Dissipation :

1.9W

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Power Dissipation-Max :

1.9W Ta

Width :

5.89mm

Weight :

506.605978mg

Fall Time (Typ) :

12 ns

Additional Feature :

FAST SWITCHING

Factory Lead Time :

14 Weeks

Terminal Position :

Dual

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Package / Case :

PowerPAK® SO-8

JESD-30 Code :

R-XDSO-C5

Radiation Hardening :

No

FET Type :

N-Channel

JESD-609 Code :

e3

Turn On Delay Time :

16 ns

Pulsed Drain Current-Max (IDM) :

50A

Continuous Drain Current (ID) :

15.8A

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Pin Count :

8

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1

Number of Pins :

8

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

50 ns

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Resistance :

11mOhm

Rise Time :

12ns

Length :

4.9mm

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V