SI7370ADP-T1-GE3

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Mfr.Part #
SI7370ADP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 60V 50A PPAK SO-8
Stock
11,914
In Stock :
11,914

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
5
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Factory Lead Time :
13 Weeks
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
5.2W Ta 69.4W Tc
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Breakdown Voltage :
60V
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Series :
TrenchFET®
JESD-30 Code :
R-PDSO-C5
Reach Compliance Code :
Unknown
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
50A
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
10m Ω @ 12A, 10V
Package / Case :
PowerPAK® SO-8
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Terminal Form :
C BEND
FET Type :
N-Channel
Mount :
Surface Mount
Avalanche Energy Rating (Eas) :
125 mJ
Resistance :
10MOhm
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
2850pF @ 30V
Case Connection :
DRAIN
Published :
2013
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Terminal Position :
Dual
Transistor Application :
SWITCHING
Datasheets
SI7370ADP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7370ADP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® SO-8, SI7370ADP-T1-GE3 pinout, SI7370ADP-T1-GE3 datasheet PDF, SI7370ADP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7370ADP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7370ADP-T1-GE3


N-Channel Tape & Reel (TR) 10m Ω @ 12A, 10V ±20V 2850pF @ 30V 70nC @ 10V PowerPAK® SO-8

SI7370ADP-T1-GE3 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 125 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2850pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).

SI7370ADP-T1-GE3 Features


the avalanche energy rating (Eas) is 125 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 60V voltage


SI7370ADP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7370ADP-T1-GE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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