SI7370ADP-T1-GE3
- Mfr.Part #
- SI7370ADP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A PPAK SO-8
- Stock
- 11,914
- In Stock :
- 11,914
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 5.2W Ta 69.4W Tc
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Breakdown Voltage :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Series :
- TrenchFET®
- JESD-30 Code :
- R-PDSO-C5
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 50A
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 12A, 10V
- Package / Case :
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Terminal Form :
- C BEND
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 125 mJ
- Resistance :
- 10MOhm
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2850pF @ 30V
- Case Connection :
- DRAIN
- Published :
- 2013
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Datasheets
- SI7370ADP-T1-GE3
N-Channel Tape & Reel (TR) 10m Ω @ 12A, 10V ±20V 2850pF @ 30V 70nC @ 10V PowerPAK® SO-8
SI7370ADP-T1-GE3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 125 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2850pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
SI7370ADP-T1-GE3 Features
the avalanche energy rating (Eas) is 125 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 60V voltage
SI7370ADP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7370ADP-T1-GE3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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