SI7368DP-T1-GE3

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Mfr.Part #
SI7368DP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 20V 13A PPAK SO-8
Stock
12,259
In Stock :
12,259

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Max Operating Temperature :
150°C
Element Configuration :
Single
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Package / Case :
PowerPAK® SO-8
Drain to Source Voltage (Vdss) :
20V
Series :
TrenchFET®
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 4.5V
Mounting Type :
Surface Mount
Power Dissipation :
1.7W
Resistance :
5.5mOhm
Fall Time (Typ) :
20 ns
Gate to Source Voltage (Vgs) :
16V
Min Operating Temperature :
-55°C
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
1.8V @ 250μA
Packaging :
Tape and Reel (TR)
Drain to Source Resistance :
5.5mOhm
Power Dissipation-Max :
1.7W Ta
Vgs (Max) :
±16V
Turn-Off Delay Time :
65 ns
Supplier Device Package :
PowerPAK® SO-8
Continuous Drain Current (ID) :
13A
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Published :
2016
Rds On Max :
5.5 mΩ
Rds On (Max) @ Id, Vgs :
5.5mOhm @ 20A, 10V
Drain to Source Breakdown Voltage :
20V
Rise Time :
20ns
Datasheets
SI7368DP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7368DP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PowerPAK® SO-8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, SI7368DP-T1-GE3 pinout, SI7368DP-T1-GE3 datasheet PDF, SI7368DP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7368DP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7368DP-T1-GE3


N-Channel Tape & Reel (TR) 5.5mOhm @ 20A, 10V ±16V 25nC @ 4.5V 20V PowerPAK® SO-8

SI7368DP-T1-GE3 Overview


This device has a continuous drain current (ID) of [13A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.MOSFETs have 5.5mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI7368DP-T1-GE3 Features


a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 65 ns
single MOSFETs transistor is 5.5mOhm
a 20V drain to source voltage (Vdss)


SI7368DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7368DP-T1-GE3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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