SI7368DP-T1-E3
- Mfr.Part #
- SI7368DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 13A PPAK SO-8
- Stock
- 39,723
- In Stock :
- 39,723
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- PowerPAK® SO-8
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Published :
- 2016
- Element Configuration :
- Single
- Power Dissipation-Max :
- 1.7W Ta
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- 20V
- Turn On Delay Time :
- 22 ns
- ECCN Code :
- EAR99
- Series :
- TrenchFET®
- Gate to Source Voltage (Vgs) :
- 16V
- Number of Pins :
- 8
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 65 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 20ns
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 20A, 10V
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 4.5V
- Vgs (Max) :
- ±16V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Vgs(th) (Max) @ Id :
- 1.8V @ 250μA
- Fall Time (Typ) :
- 20 ns
- Continuous Drain Current (ID) :
- 13A
- Power Dissipation :
- 1.7W
- Datasheets
- SI7368DP-T1-E3
N-Channel Tape & Reel (TR) 5.5m Ω @ 20A, 10V ±16V 25nC @ 4.5V PowerPAK® SO-8
SI7368DP-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [65 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 22 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI7368DP-T1-E3 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 65 ns
SI7368DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7368DP-T1-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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