SI7368DP-T1-E3

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Mfr.Part #
SI7368DP-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 20V 13A PPAK SO-8
Stock
39,723
In Stock :
39,723

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
PowerPAK® SO-8
Mounting Type :
Surface Mount
Number of Elements :
1
Published :
2016
Element Configuration :
Single
Power Dissipation-Max :
1.7W Ta
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
Terminal Finish :
Matte Tin (Sn)
Drain to Source Breakdown Voltage :
20V
Turn On Delay Time :
22 ns
ECCN Code :
EAR99
Series :
TrenchFET®
Gate to Source Voltage (Vgs) :
16V
Number of Pins :
8
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Turn-Off Delay Time :
65 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
20ns
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 20A, 10V
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 4.5V
Vgs (Max) :
±16V
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Vgs(th) (Max) @ Id :
1.8V @ 250μA
Fall Time (Typ) :
20 ns
Continuous Drain Current (ID) :
13A
Power Dissipation :
1.7W
Datasheets
SI7368DP-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7368DP-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PowerPAK® SO-8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, SI7368DP-T1-E3 pinout, SI7368DP-T1-E3 datasheet PDF, SI7368DP-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7368DP-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7368DP-T1-E3


N-Channel Tape & Reel (TR) 5.5m Ω @ 20A, 10V ±16V 25nC @ 4.5V PowerPAK® SO-8

SI7368DP-T1-E3 Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [65 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 22 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI7368DP-T1-E3 Features


a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 65 ns


SI7368DP-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7368DP-T1-E3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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