SI7366DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

50A

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Pbfree Code :

yes

Number of Elements :

1

Radiation Hardening :

No

JESD-609 Code :

e3

REACH SVHC :

Unknown

Terminal Position :

Dual

JESD-30 Code :

R-XDSO-C5

FET Type :

N-Channel

Power Dissipation-Max :

1.7W Ta

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Continuous Drain Current (ID) :

20A

Drain-source On Resistance-Max :

0.0055Ohm

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® SO-8

Element Configuration :

Single

Threshold Voltage :

3V

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

21 ns

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 20A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

1.7W

ECCN Code :

EAR99

Rise Time :

16ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

TrenchFET®

Transistor Application :

SWITCHING

Fall Time (Typ) :

16 ns

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Peak Reflow Temperature (Cel) :

260

Published :

2011

Pin Count :

8

Mount :

Surface Mount

Turn-Off Delay Time :

58 ns

Number of Pins :

8

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V