SI7366DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2016

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Element Configuration :

Single

Case Connection :

DRAIN

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

21 ns

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Radiation Hardening :

No

Rise Time :

16ns

FET Type :

N-Channel

Power Dissipation :

1.7W

Mount :

Surface Mount

Turn-Off Delay Time :

58 ns

Pulsed Drain Current-Max (IDM) :

50A

Fall Time (Typ) :

16 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0055Ohm

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

20A

Terminal Form :

C BEND

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Pin Count :

8

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 20A, 10V

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Power Dissipation-Max :

1.7W Ta

Package / Case :

PowerPAK® SO-8

JESD-30 Code :

R-XDSO-C5