SI7356ADP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Terminal Finish :

MATTE TIN

Length :

4.9mm

Power Dissipation-Max :

5.4W Ta 83W Tc

Transistor Application :

SWITCHING

Radiation Hardening :

No

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

40A

Power Dissipation :

5.4W

Additional Feature :

ULTRA-LOW RESISTANCE

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

3m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.004ohm

Fall Time (Typ) :

31 ns

JESD-30 Code :

R-XDSO-C5

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

70A

Package / Case :

PowerPAK® SO-8

Weight :

506.605978mg

Number of Pins :

8

Published :

2013

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

95 ns

Lead Free :

Lead Free

Number of Terminations :

5

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

6215pF @ 15V

Peak Reflow Temperature (Cel) :

260

Width :

5.89mm

DS Breakdown Voltage-Min :

30V

Continuous Drain Current (ID) :

31A

Number of Elements :

1

Case Connection :

DRAIN

Rise Time :

18ns

Pin Count :

8

Height :

1.04mm

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Terminal Form :

C BEND

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pbfree Code :

yes

Mount :

Surface Mount

Turn On Delay Time :

25 ns

Terminal Position :

Dual