SI7344DP-T1-E3
- Mfr.Part #
- SI7344DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 11A PPAK SO-8
- Stock
- 5,501
- In Stock :
- 5,501
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation :
- 1.8W
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Turn-Off Delay Time :
- 40 ns
- Number of Pins :
- 8
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2008
- Supplier Device Package :
- PowerPAK® SO-8
- Series :
- TrenchFET®
- Drain to Source Resistance :
- 8mOhm
- Continuous Drain Current (ID) :
- 11A
- Power Dissipation-Max :
- 1.8W Ta
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Package / Case :
- PowerPAK® SO-8
- Drain to Source Voltage (Vdss) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 8mOhm @ 17A, 10V
- Rds On Max :
- 8 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 15ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Drain to Source Breakdown Voltage :
- 20V
- Datasheets
- SI7344DP-T1-E3
N-Channel Tape & Reel (TR) 8mOhm @ 17A, 10V ±20V 15nC @ 4.5V 20V PowerPAK® SO-8
SI7344DP-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 8mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI7344DP-T1-E3 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 8mOhm
a 20V drain to source voltage (Vdss)
SI7344DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7344DP-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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