SI5997DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Published :

2012

DS Breakdown Voltage-Min :

30V

FET Type :

2 P-Channel (Dual)

Package / Case :

PowerPAK® ChipFET™ Dual

Number of Pins :

8

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Max Power Dissipation :

10.4W

Rds On (Max) @ Id, Vgs :

54m Ω @ 3A, 10V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Number of Elements :

2

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.3W

Vgs(th) (Max) @ Id :

2.4V @ 250μA

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Weight :

84.99187mg

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

6A

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.054Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 15V

Reach Compliance Code :

Unknown

Threshold Voltage :

-1.2V

JESD-30 Code :

R-PDSO-C6

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Terminal Form :

C BEND

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

5.1A

Current - Continuous Drain (Id) @ 25°C :

6A