SI5903DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Width :

1.7018mm

Turn-Off Delay Time :

25 ns

Threshold Voltage :

-600mV

Published :

2002

Transistor Element Material :

SILICON

Length :

3.0988mm

REACH SVHC :

No SVHC

Max Power Dissipation :

1.1W

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

25 ns

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Package / Case :

8-SMD, Flat Lead

Turn On Delay Time :

13 ns

Terminal Form :

C BEND

Pin Count :

8

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

-2.9A

Number of Elements :

2

Terminal Finish :

MATTE TIN

Resistance :

155mOhm

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Series :

TrenchFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

155m Ω @ 2.1A, 4.5V

Element Configuration :

Dual

Base Part Number :

SI5903

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1.0922mm

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Current - Continuous Drain (Id) @ 25°C :

2.1A

Rise Time :

35ns

Number of Pins :

8

FET Type :

2 P-Channel (Dual)

Power Dissipation :

1.1W

Drain to Source Breakdown Voltage :

-20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)