SI5902BDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

30V

Max Junction Temperature (Tj) :

150°C

Max Power Dissipation :

3.12W

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

4 ns

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Weight :

84.99187mg

Current - Continuous Drain (Id) @ 25°C :

4A

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Supplier Device Package :

1206-8 ChipFET™

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1.5V

Number of Channels :

2

Published :

2010

Power - Max :

3.12W

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

1.1mm

Element Configuration :

Dual

Package / Case :

8-SMD, Flat Lead

Continuous Drain Current (ID) :

3.7A

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

10 ns

Input Capacitance :

220pF

Drain to Source Resistance :

53mOhm

Rds On Max :

65 mΩ

Series :

TrenchFET®

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

65mOhm @ 3.1A, 10V

FET Type :

2 N-Channel (Dual)

Base Part Number :

SI5902

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Power Dissipation :

1.5W

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Resistance :

65mOhm

Drain to Source Voltage (Vdss) :

30V

Nominal Vgs :

1.5 V

Factory Lead Time :

14 Weeks