SI5905DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Resistance :

90mOhm

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Power Dissipation :

1.1W

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

8V

Radiation Hardening :

No

Max Power Dissipation :

1.1W

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

90m Ω @ 3A, 4.5V

Base Part Number :

SI5905

Fall Time (Typ) :

45 ns

Mount :

Surface Mount

Transistor Element Material :

SILICON

Pin Count :

8

Turn-Off Delay Time :

30 ns

Number of Terminations :

8

FET Type :

2 P-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

10 ns

Contact Plating :

Tin

Terminal Form :

C BEND

ECCN Code :

EAR99

Continuous Drain Current (ID) :

3A

Rise Time :

45ns

Drain Current-Max (Abs) (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Element Configuration :

Dual

Package / Case :

8-SMD, Flat Lead

Published :

2012

Number of Pins :

8

Number of Elements :

2