SI5902BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Series :

TrenchFET®

Max Operating Temperature :

150°C

Width :

1.65mm

Published :

2010

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

65mOhm @ 3.1A, 10V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Turn On Delay Time :

4 ns

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Supplier Device Package :

1206-8 ChipFET™

Package / Case :

8-SMD, Flat Lead

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Power Dissipation :

1.5W

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

2

Fall Time (Typ) :

12 ns

Number of Pins :

8

Base Part Number :

SI5902

Power - Max :

3.12W

Continuous Drain Current (ID) :

4A

Resistance :

65mOhm

Input Capacitance :

220pF

Max Power Dissipation :

3.12W

Weight :

84.99187mg

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

30V

Rise Time :

12ns

Factory Lead Time :

14 Weeks

Height :

1.1mm

Drain to Source Resistance :

65mOhm

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

10 ns

Length :

3.05mm

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

65 mΩ

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Operating Temperature :

-55°C~150°C TJ