SI5905BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

80mOhm @ 3.3A, 4.5V

Package / Case :

8-SMD, Flat Lead

Turn-Off Delay Time :

17 ns

Supplier Device Package :

1206-8 ChipFET™

Element Configuration :

Dual

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

8V

Turn On Delay Time :

5 ns

FET Type :

2 P-Channel (Dual)

Max Power Dissipation :

3.1W

Drain to Source Resistance :

80mOhm

FET Feature :

Logic Level Gate

Number of Channels :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 4V

Fall Time (Typ) :

10 ns

Input Capacitance :

350pF

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

-8V

RoHS Status :

ROHS3 Compliant

Power - Max :

3.1W

Width :

1.65mm

Rise Time :

10ns

Current - Continuous Drain (Id) @ 25°C :

4A

Number of Pins :

8

Weight :

84.99187mg

Continuous Drain Current (ID) :

4A

Base Part Number :

SI5905

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Height :

1.1mm

Gate to Source Voltage (Vgs) :

8V

Rds On Max :

80 mΩ

Mount :

Surface Mount

Max Operating Temperature :

150°C

Length :

3.05mm

Packaging :

Tape and Reel (TR)