SI5904DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.1W

Terminal Finish :

PURE MATTE TIN

Continuous Drain Current (ID) :

3.1A

Number of Pins :

8

Number of Terminations :

8

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20V

Package / Case :

8-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

75m Ω @ 3.1A, 4.5V

Published :

2016

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

9 ns

Base Part Number :

SI5904

Pbfree Code :

yes

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Turn-Off Delay Time :

19 ns

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Terminal Form :

C BEND

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Rise Time :

35ns

Turn On Delay Time :

12 ns

Power Dissipation :

1.1W

Drain-source On Resistance-Max :

0.075Ohm

Mounting Type :

Surface Mount

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V