SI5913DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Width :

1.65mm

Turn-Off Delay Time :

18 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3.7A

Rise Time :

40ns

JESD-609 Code :

e3

Power Dissipation-Max :

1.7W Ta 3.1W Tc

Length :

3.05mm

Gate to Source Voltage (Vgs) :

12V

Drain Current-Max (Abs) (ID) :

4A

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Type :

P-Channel

Published :

2013

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Radiation Hardening :

No

Weight :

84.99187mg

Pbfree Code :

yes

Mounting Type :

Surface Mount

FET Feature :

Schottky Diode (Isolated)

Drain to Source Breakdown Voltage :

-20V

Terminal Form :

C BEND

Vgs (Max) :

±12V

Package / Case :

8-SMD, Flat Lead

Turn On Delay Time :

18 ns

Terminal Finish :

PURE MATTE TIN

Number of Pins :

8

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

1.1mm

Pin Count :

8

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Series :

LITTLE FOOT®

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

84m Ω @ 3.7A, 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

15 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 10V

Number of Channels :

1

Fall Time (Typ) :

40 ns