SI5904DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

19 ns

Number of Pins :

8

Turn On Delay Time :

12 ns

Max Power Dissipation :

1.1W

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

3.1A

Drain to Source Breakdown Voltage :

20V

Resistance :

75mOhm

Threshold Voltage :

1.5V

Element Configuration :

Dual

Rise Time :

35ns

Rds On (Max) @ Id, Vgs :

75m Ω @ 3.1A, 4.5V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SMD, Flat Lead

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Base Part Number :

SI5904

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

35 ns

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Pin Count :

8

Power Dissipation :

1.1W

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Number of Terminations :

8

Lead Free :

Lead Free

Series :

TrenchFET®

Mounting Type :

Surface Mount

Terminal Form :

C BEND