SI5913DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Terminal Finish :

PURE MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Package / Case :

8-SMD, Flat Lead

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 10V

Series :

LITTLE FOOT®

Drain to Source Breakdown Voltage :

-20V

Terminal Position :

Dual

Qualification Status :

Not Qualified

Vgs (Max) :

±12V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

20V

Reach Compliance Code :

Unknown

Pin Count :

8

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

10 ns

Weight :

84.99187mg

Turn On Delay Time :

18 ns

Factory Lead Time :

15 Weeks

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Terminal Form :

C BEND

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

FET Feature :

Schottky Diode (Isolated)

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.7W Ta 3.1W Tc

Continuous Drain Current (ID) :

3.7A

Transistor Application :

SWITCHING

Rise Time :

40ns

FET Type :

P-Channel

Turn-Off Delay Time :

18 ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

84m Ω @ 3.7A, 10V

Number of Terminations :

8

Published :

2013