SI5980DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

7.8W

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 50V

Rise Time :

11ns

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

1.3A

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

3.3nC @ 10V

Pbfree Code :

yes

JESD-30 Code :

R-XDSO-N6

Pin Count :

8

Published :

2010

Base Part Number :

SI5980

Continuous Drain Current (ID) :

2.5A

Number of Pins :

8

Drain-source On Resistance-Max :

0.567Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

PowerPAK® ChipFET™ Dual

Rds On (Max) @ Id, Vgs :

567m Ω @ 400mA, 10V

Element Configuration :

Dual

Power Dissipation :

2W

Number of Elements :

2

Radiation Hardening :

No

Turn On Delay Time :

8 ns

Terminal Finish :

PURE MATTE TIN

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Turn-Off Delay Time :

8 ns

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C

FET Feature :

Standard

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Packaging :

Cut Tape (CT)

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

9 ns

Mount :

Surface Mount

Series :

TrenchFET®