SI5947DU-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

10 ns

Length :

3mm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Height :

750μm

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Width :

1.9mm

FET Type :

2 P-Channel (Dual)

Turn-Off Delay Time :

25 ns

Input Capacitance :

480pF

Power Dissipation :

2.3W

Number of Channels :

2

Min Operating Temperature :

-55°C

Rds On Max :

58 mΩ

Published :

2009

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

Turn On Delay Time :

5 ns

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® ChipFET™ Dual

Continuous Drain Current (ID) :

5A

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Max Power Dissipation :

2.3W

Series :

TrenchFET®

Number of Elements :

2

Power - Max :

10.4W

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Supplier Device Package :

PowerPAK® ChipFet Dual

Drain to Source Resistance :

58mOhm

Current - Continuous Drain (Id) @ 25°C :

6A

Rds On (Max) @ Id, Vgs :

58mOhm @ 3.6A, 4.5V

Base Part Number :

SI5947