SI5943DU-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Drain to Source Breakdown Voltage :

-12V

Turn On Delay Time :

5 ns

Max Operating Temperature :

150°C

Fall Time (Typ) :

7 ns

Element Configuration :

Dual

Rds On Max :

64 mΩ

Published :

2016

Drain to Source Resistance :

64mOhm

Base Part Number :

SI5943

Current - Continuous Drain (Id) @ 25°C :

6A

Width :

1.9mm

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 8V

FET Type :

2 P-Channel (Dual)

Supplier Device Package :

PowerPAK® ChipFet Dual

Series :

TrenchFET®

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Power - Max :

8.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

12V

Rds On (Max) @ Id, Vgs :

64mOhm @ 3.6A, 4.5V

FET Feature :

Logic Level Gate

Package / Case :

PowerPAK® ChipFET™ Dual

Min Operating Temperature :

-55°C

Max Power Dissipation :

2.3W

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 6V

Input Capacitance :

460pF

Turn-Off Delay Time :

23 ns

Continuous Drain Current (ID) :

6A

Rise Time :

15ns

Operating Temperature :

-55°C~150°C TJ

Length :

3mm

Height :

750μm

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA