SI5938DU-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

65ns

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 8V

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

20 ns

Min Operating Temperature :

-55°C

Number of Channels :

2

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 10V

Fall Time (Typ) :

10 ns

Rds On (Max) @ Id, Vgs :

39mOhm @ 4.4A, 4.5V

Width :

1.9mm

Power - Max :

8.3W

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

40 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance :

520pF

Max Power Dissipation :

2.3W

Drain to Source Resistance :

39mOhm

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

6A

Length :

3mm

Package / Case :

PowerPAK® ChipFET™ Dual

Element Configuration :

Dual

Mount :

Surface Mount

Height :

750μm

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Base Part Number :

SI5938

FET Feature :

Logic Level Gate

Supplier Device Package :

PowerPAK® ChipFet Dual

Drain to Source Breakdown Voltage :

20V

Rds On Max :

39 mΩ

Continuous Drain Current (ID) :

6A