SI5920DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Additional Feature :

ULTRA-LOW RESISTANCE

Max Power Dissipation :

2.04W

Terminal Finish :

MATTE TIN

Published :

2008

Mount :

Surface Mount

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

32m Ω @ 6.8A, 4.5V

Number of Terminations :

8

Length :

3.05mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Fall Time (Typ) :

7 ns

Packaging :

Tape and Reel (TR)

Base Part Number :

SI5920

Turn On Delay Time :

8 ns

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

2

Gate to Source Voltage (Vgs) :

5V

Terminal Form :

C BEND

Element Configuration :

Dual

Power - Max :

3.12W

FET Type :

2 N-Channel (Dual)

Pin Count :

8

ECCN Code :

EAR99

Width :

1.65mm

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 4V

JESD-609 Code :

e3

Turn-Off Delay Time :

18 ns

Transistor Element Material :

SILICON

Rise Time :

11ns

Drain to Source Voltage (Vdss) :

8V

Height :

1.1mm

Continuous Drain Current (ID) :

4A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Package / Case :

8-SMD, Flat Lead

Drain to Source Breakdown Voltage :

8V

Drain Current-Max (Abs) (ID) :

4A

Vgs(th) (Max) @ Id :

1V @ 250μA

Weight :

84.99187mg

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V