SI5519DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

6A

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

2

Length :

3mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.27W

Packaging :

Tape and Reel (TR)

FET Type :

N and P-Channel

Max Power Dissipation :

2.27W

Fall Time (Typ) :

8.5 ns

Turn On Delay Time :

4.5 ns

Mounting Type :

Surface Mount

Published :

2009

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Rds On Max :

36 mΩ

Series :

TrenchFET®

Supplier Device Package :

PowerPAK® ChipFet Dual

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

2

Rise Time :

11ns

Base Part Number :

SI5519

Continuous Drain Current (ID) :

6A

Power - Max :

10.4W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Turn-Off Delay Time :

25 ns

Mount :

Surface Mount

Width :

1.9mm

Min Operating Temperature :

-55°C

Height :

750μm

Input Capacitance :

660pF

Drain to Source Resistance :

64mOhm

FET Feature :

Standard

Package / Case :

PowerPAK® ChipFET™ Dual

Rds On (Max) @ Id, Vgs :

36mOhm @ 6.1A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 10V

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 10V