SI1330EDL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

FET Type :

N-Channel

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 250mA, 10V

Terminal Finish :

MATTE TIN

Length :

2mm

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Resistance :

2.5Ohm

Height :

1mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Fall Time (Typ) :

4.8 ns

Packaging :

Tape and Reel (TR)

Weight :

124.596154mg

Number of Channels :

1

Rise Time :

4.8ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Package / Case :

SC-70, SOT-323

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Terminal Form :

Gull wing

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

ECCN Code :

EAR99

Width :

1.25mm

Published :

2017

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

250mA

JESD-609 Code :

e3

Series :

TrenchFET®

Threshold Voltage :

2V

Mount :

Surface Mount

Terminal Position :

Dual

Lead Free :

Lead Free

Element Configuration :

Single

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

3V 10V

Pbfree Code :

yes

Power Dissipation :

280mW

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

0.24A

Turn On Delay Time :

3.8 ns

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

240mA Ta

Turn-Off Delay Time :

12.8 ns

Power Dissipation-Max :

280mW Ta