SI1307DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

850mA

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

32 ns

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

17 ns

Package / Case :

SC-70, SOT-323

Reach Compliance Code :

Unknown

Length :

2.1844mm

Power Dissipation :

290mW

Power Dissipation-Max :

290mW Ta

Voltage :

12V

Terminal Position :

Dual

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Series :

TrenchFET®

Width :

1.3462mm

Lead Free :

Lead Free

Pin Count :

3

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Pins :

3

Rise Time :

32ns

Current - Continuous Drain (Id) @ 25°C :

850mA Ta

Terminal Finish :

MATTE TIN

Resistance :

290mOhm

Drain to Source Breakdown Voltage :

-12V

Element Configuration :

Single

Number of Terminations :

3

ECCN Code :

EAR99

Published :

2008

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Current :

68A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Height :

990.6μm

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

290m Ω @ 1A, 4.5V

Pbfree Code :

yes

Turn On Delay Time :

7.5 ns

Number of Elements :

1