SI1305DL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Series :

TrenchFET®

Packaging :

Cut Tape (CT)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Drain-source On Resistance-Max :

0.28Ohm

Turn-Off Delay Time :

17 ns

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

860mA

Package / Case :

SC-70, SOT-323

Rds On (Max) @ Id, Vgs :

280m Ω @ 1A, 4.5V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Terminations :

3

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Terminal Finish :

PURE MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Current - Continuous Drain (Id) @ 25°C :

860mA Ta

Mount :

Surface Mount

Radiation Hardening :

No

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Rise Time :

55ns

Turn On Delay Time :

8 ns

DS Breakdown Voltage-Min :

8V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Fall Time (Typ) :

12 ns

Power Dissipation-Max :

290mW Ta

Published :

2015

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

P-Channel

Number of Elements :

1

Power Dissipation :

290mW

Drain Current-Max (Abs) (ID) :

0.86A