SI1302DL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

600mA Ta

Rise Time :

8ns

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

280mW Ta

Weight :

6.208546mg

Element Configuration :

Single

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

0.6A

FET Type :

N-Channel

Factory Lead Time :

14 Weeks

Number of Terminations :

3

Terminal Form :

Gull wing

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

480m Ω @ 600mA, 10V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Package / Case :

SC-70, SOT-323

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Published :

2016

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Fall Time (Typ) :

7 ns

Turn On Delay Time :

5 ns

Drain-source On Resistance-Max :

0.48Ohm

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

8 ns

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Continuous Drain Current (ID) :

600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Number of Pins :

3