SI1305EDL-T1-E3
- Mfr.Part #
- SI1305EDL-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET P-CH 8V 860MA SC70-3
- Stock
- 1,293
- In Stock :
- 1,293
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 2mm
- RoHS Status :
- ROHS3 Compliant
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 8V
- Drain to Source Resistance :
- 280mOhm
- Fall Time (Typ) :
- 431 ns
- Width :
- 1.25mm
- Height :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Vgs (Max) :
- ±8V
- Turn-Off Delay Time :
- 1.35 μs
- Published :
- 2015
- Turn On Delay Time :
- 206 ns
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 450mV @ 250μA (Min)
- Power Dissipation-Max :
- 290mW Ta
- Number of Channels :
- 1
- Supplier Device Package :
- SC-70-3
- Power Dissipation :
- 340mW
- Gate to Source Voltage (Vgs) :
- 8V
- Current - Continuous Drain (Id) @ 25°C :
- 860mA Ta
- Rds On Max :
- 280 mΩ
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 1A, 4.5V
- Rise Time :
- 431ns
- Continuous Drain Current (ID) :
- 860mA
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Mount :
- Surface Mount
- Weight :
- 124.596154mg
- Datasheets
- SI1305EDL-T1-E3
P-Channel Tape & Reel (TR) 280mOhm @ 1A, 4.5V ±8V 4nC @ 4.5V 8V SC-70, SOT-323
SI1305EDL-T1-E3 Overview
This device has a continuous drain current (ID) of [860mA], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 1.35 μs.MOSFETs have 280mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 206 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.In order to operate this transistor, a voltage of 8V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
SI1305EDL-T1-E3 Features
a continuous drain current (ID) of 860mA
the turn-off delay time is 1.35 μs
single MOSFETs transistor is 280mOhm
a 8V drain to source voltage (Vdss)
SI1305EDL-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1305EDL-T1-E3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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