SI1300BDL-T1-E3
- Mfr.Part #
- SI1300BDL-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 400MA SC70-3
- Stock
- 233
- In Stock :
- 233
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2mm
- Turn-Off Delay Time :
- 8 ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Turn On Delay Time :
- 7 ns
- Height :
- 1mm
- Rise Time :
- 10ns
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Published :
- 2017
- Gate Charge (Qg) (Max) @ Vgs :
- 0.84nC @ 4.5V
- Nominal Vgs :
- 1 V
- Power Dissipation :
- 190mW
- Power Dissipation-Max :
- 190mW Ta 200mW Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 35pF @ 10V
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 10 ns
- Package / Case :
- SC-70, SOT-323
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 250mA, 4.5V
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 8V
- Continuous Drain Current (ID) :
- 320mA
- Pbfree Code :
- yes
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Resistance :
- 850mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 400mA Tc
- Series :
- TrenchFET®
- Width :
- 1.25mm
- Drain Current-Max (Abs) (ID) :
- 0.4A
- Vgs (Max) :
- ±8V
- Threshold Voltage :
- 1V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- REACH SVHC :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Datasheets
- SI1300BDL-T1-E3
N-Channel Tape & Reel (TR) 850m Ω @ 250mA, 4.5V ±8V 35pF @ 10V 0.84nC @ 4.5V SC-70, SOT-323
SI1300BDL-T1-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 35pF @ 10V.This device has a continuous drain current (ID) of [320mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.A device's drain current is its maximum continuous current, and this device's drain current is 0.4A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 8 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
SI1300BDL-T1-E3 Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 8 ns
a threshold voltage of 1V
SI1300BDL-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1300BDL-T1-E3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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