SI1304BDL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Element Material :

SILICON

Series :

TrenchFET®

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

900mA Tc

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

2.7nC @ 4.5V

Radiation Hardening :

No

Fall Time (Typ) :

10 ns

Rds On (Max) @ Id, Vgs :

270m Ω @ 900mA, 4.5V

Turn On Delay Time :

10 ns

Package / Case :

SC-70, SOT-323

Gate to Source Voltage (Vgs) :

12V

Published :

2012

Terminal Finish :

PURE MATTE TIN

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 15V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

0.85A

Power Dissipation-Max :

340mW Ta 370mW Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

30ns

Drain-source On Resistance-Max :

0.27Ohm

Turn-Off Delay Time :

5 ns

Number of Terminations :

3

Power Dissipation :

340mW

Continuous Drain Current (ID) :

850mA

FET Type :

N-Channel

Terminal Position :

Dual

Mount :

Surface Mount

Vgs (Max) :

±12V

Time@Peak Reflow Temperature-Max (s) :

30