SI1300BDL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

850m Ω @ 250mA, 4.5V

Pbfree Code :

yes

Rise Time :

10ns

Gate to Source Voltage (Vgs) :

8V

Drain Current-Max (Abs) (ID) :

0.4A

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

400mA Tc

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

370mA

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±8V

Power Dissipation-Max :

190mW Ta 200mW Tc

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

35pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Package / Case :

SC-70, SOT-323

FET Type :

N-Channel

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Vgs(th) (Max) @ Id :

1V @ 250μA

Pin Count :

3

Fall Time (Typ) :

7 ns

Turn On Delay Time :

7 ns

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Number of Pins :

3

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

190mW

Gate Charge (Qg) (Max) @ Vgs :

0.84nC @ 4.5V

Mounting Type :

Surface Mount

Terminal Finish :

PURE MATTE TIN

Published :

2012

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.85Ohm

Mount :

Surface Mount

Turn-Off Delay Time :

8 ns