SI1304BDL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 15V

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

900mA Tc

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

2.7nC @ 4.5V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Terminal Position :

Dual

Continuous Drain Current (ID) :

900mA

Nominal Vgs :

1.3 V

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Threshold Voltage :

1.3V

Turn-Off Delay Time :

5 ns

Power Dissipation :

340mW

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Resistance :

270mOhm

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Terminal Form :

Gull wing

Published :

2009

Element Configuration :

Single

Length :

2.1844mm

Height :

990.6μm

Package / Case :

SC-70, SOT-323

Drain Current-Max (Abs) (ID) :

0.85A

Series :

TrenchFET®

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Turn On Delay Time :

10 ns

Rise Time :

30ns

Rds On (Max) @ Id, Vgs :

270m Ω @ 900mA, 4.5V

Width :

1.3462mm

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

340mW Ta 370mW Tc

FET Type :

N-Channel

Fall Time (Typ) :

30 ns