SI1302DL-T1-E3
- Mfr.Part #
- SI1302DL-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 600MA SC70-3
- Stock
- 10,567
- In Stock :
- 10,567
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 7 ns
- Series :
- TrenchFET®
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- Unknown
- Factory Lead Time :
- 14 Weeks
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 280mW Ta
- Power Dissipation :
- 310mW
- Nominal Vgs :
- 3 V
- Length :
- 2mm
- Drain to Source Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Width :
- 1.25mm
- Package / Case :
- SC-70, SOT-323
- Threshold Voltage :
- 1V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 640mA
- Pbfree Code :
- yes
- Rise Time :
- 8ns
- Peak Reflow Temperature (Cel) :
- 260
- Turn-Off Delay Time :
- 8 ns
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 1.4nC @ 10V
- Weight :
- 6.208546mg
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 600mA Ta
- Rds On (Max) @ Id, Vgs :
- 480m Ω @ 600mA, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 0.6A
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Resistance :
- 480mOhm
- Published :
- 2009
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 1mm
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 5 ns
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Pin Count :
- 3
- Datasheets
- SI1302DL-T1-E3
N-Channel Tape & Reel (TR) 480m Ω @ 600mA, 10V ±20V 1.4nC @ 10V SC-70, SOT-323
SI1302DL-T1-E3 Overview
This device conducts a continuous drain current (ID) of 640mA, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.6A.When the device is turned off, a turn-off delay time of 8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SI1302DL-T1-E3 Features
a continuous drain current (ID) of 640mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 8 ns
a threshold voltage of 1V
SI1302DL-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1302DL-T1-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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