SI1303DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

12.5 ns

Pin Count :

3

Element Configuration :

Single

REACH SVHC :

Unknown

Pbfree Code :

yes

Continuous Drain Current (ID) :

670mA

Gate to Source Voltage (Vgs) :

12V

Threshold Voltage :

-1.4V

Resistance :

430mOhm

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

20V

FET Type :

P-Channel

Height :

990.6μm

Lead Free :

Lead Free

Power Dissipation :

290mW

Current - Continuous Drain (Id) @ 25°C :

670mA Ta

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.67A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

430m Ω @ 1A, 4.5V

Nominal Vgs :

-1.4 V

Width :

1.3462mm

Package / Case :

SC-70, SOT-323

Power Dissipation-Max :

290mW Ta

Turn On Delay Time :

9 ns

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Rise Time :

31ns

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Length :

2.1844mm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Vgs (Max) :

±12V

Fall Time (Typ) :

14 ns

Terminal Form :

Gull wing

JESD-609 Code :

e3

Number of Pins :

3