SI1303EDL-T1-E3

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Mfr.Part #
SI1303EDL-T1-E3
Manufacturer
Vishay
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
MOSFET P-CH 20V 670MA SC70-3
Stock
8,264
In Stock :
8,264

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
290mW
Rise Time :
410ns
Continuous Drain Current (ID) :
670mA
Current - Continuous Drain (Id) @ 25°C :
670mA Ta
Element Configuration :
Single
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Power Dissipation-Max :
290mW Ta
FET Type :
P-Channel
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Published :
2009
Turn-Off Delay Time :
560 ns
Fall Time (Typ) :
410 ns
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
430m Ω @ 1A, 4.5V
Package / Case :
SC-70, SOT-323
Gate Charge (Qg) (Max) @ Vgs :
2.5nC @ 4.5V
Gate to Source Voltage (Vgs) :
12V
Vgs(th) (Max) @ Id :
600mV @ 250μA (Min)
Vgs (Max) :
±12V
Drain to Source Breakdown Voltage :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
SI1303EDL-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1303EDL-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:SC-70, SOT-323, SI1303EDL-T1-E3 pinout, SI1303EDL-T1-E3 datasheet PDF, SI1303EDL-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1303EDL-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1303EDL-T1-E3


P-Channel Tape & Reel (TR) 430m Ω @ 1A, 4.5V ±12V 2.5nC @ 4.5V SC-70, SOT-323

SI1303EDL-T1-E3 Overview


This device conducts a continuous drain current (ID) of 670mA, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 560 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).

SI1303EDL-T1-E3 Features


a continuous drain current (ID) of 670mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 560 ns


SI1303EDL-T1-E3 Applications


There are a lot of Vishay Siliconix
SI1303EDL-T1-E3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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