SI1307EDL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

ESD Protection

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

12V

Mounting Type :

Surface Mount

Terminal Position :

Dual

JESD-609 Code :

e3

Published :

2010

Power Dissipation-Max :

290mW Ta

Qualification Status :

Not Qualified

Pin Count :

3

Vgs (Max) :

±8V

Terminal Finish :

PURE MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SC-70, SOT-323

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

290m Ω @ 1A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.29Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

12V

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G3

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Current - Continuous Drain (Id) @ 25°C :

850mA Ta

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.85A