SI1307EDL-T1-E3
- Mfr.Part #
- SI1307EDL-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 850MA SC70-3
- Stock
- 1,529
- In Stock :
- 1,529
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 450ns
- Number of Pins :
- 3
- Number of Elements :
- 1
- Turn On Delay Time :
- 210 ns
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 290mW Ta
- Continuous Drain Current (ID) :
- 910mA
- Current :
- 68A
- Vgs (Max) :
- ±8V
- Turn-Off Delay Time :
- 910 ns
- Gate to Source Voltage (Vgs) :
- 8V
- Terminal Finish :
- PURE MATTE TIN
- Published :
- 2016
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Voltage :
- 12V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Nominal Vgs :
- -45 V
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Additional Feature :
- ESD Protection
- Fall Time (Typ) :
- 450 ns
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 450mV @ 250μA (Min)
- Radiation Hardening :
- No
- Threshold Voltage :
- -45V
- Drain to Source Breakdown Voltage :
- 12V
- REACH SVHC :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 1A, 4.5V
- JESD-609 Code :
- e3
- Power Dissipation :
- 290mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 850mA Ta
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Resistance :
- 290mOhm
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- SI1307EDL-T1-E3
P-Channel Tape & Reel (TR) 290m Ω @ 1A, 4.5V ±8V 5nC @ 4.5V SC-70, SOT-323
SI1307EDL-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 910mA.When VGS=12V, and ID flows to VDS at 12VVDS, the drain-source breakdown voltage is 12V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 910 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 210 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -45V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
SI1307EDL-T1-E3 Features
a continuous drain current (ID) of 910mA
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 910 ns
a threshold voltage of -45V
SI1307EDL-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1307EDL-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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