SI1307EDL-T1-E3

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Mfr.Part #
SI1307EDL-T1-E3
Manufacturer
Vishay
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
MOSFET P-CH 12V 850MA SC70-3
Stock
1,529
In Stock :
1,529

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
450ns
Number of Pins :
3
Number of Elements :
1
Turn On Delay Time :
210 ns
FET Type :
P-Channel
Mounting Type :
Surface Mount
Power Dissipation-Max :
290mW Ta
Continuous Drain Current (ID) :
910mA
Current :
68A
Vgs (Max) :
±8V
Turn-Off Delay Time :
910 ns
Gate to Source Voltage (Vgs) :
8V
Terminal Finish :
PURE MATTE TIN
Published :
2016
Pin Count :
3
Package / Case :
SC-70, SOT-323
Lead Free :
Lead Free
Terminal Position :
Dual
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 4.5V
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Voltage :
12V
Time@Peak Reflow Temperature-Max (s) :
30
Number of Terminations :
3
Element Configuration :
Single
Nominal Vgs :
-45 V
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Additional Feature :
ESD Protection
Fall Time (Typ) :
450 ns
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
450mV @ 250μA (Min)
Radiation Hardening :
No
Threshold Voltage :
-45V
Drain to Source Breakdown Voltage :
12V
REACH SVHC :
Unknown
Rds On (Max) @ Id, Vgs :
290m Ω @ 1A, 4.5V
JESD-609 Code :
e3
Power Dissipation :
290mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
850mA Ta
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
Resistance :
290mOhm
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Datasheets
SI1307EDL-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1307EDL-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Package / Case:SC-70, SOT-323, Voltage:12V, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, SI1307EDL-T1-E3 pinout, SI1307EDL-T1-E3 datasheet PDF, SI1307EDL-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1307EDL-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1307EDL-T1-E3


P-Channel Tape & Reel (TR) 290m Ω @ 1A, 4.5V ±8V 5nC @ 4.5V SC-70, SOT-323

SI1307EDL-T1-E3 Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 910mA.When VGS=12V, and ID flows to VDS at 12VVDS, the drain-source breakdown voltage is 12V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 910 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 210 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -45V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.

SI1307EDL-T1-E3 Features


a continuous drain current (ID) of 910mA
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 910 ns
a threshold voltage of -45V


SI1307EDL-T1-E3 Applications


There are a lot of Vishay Siliconix
SI1307EDL-T1-E3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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