PSMN2R0-60ES

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

60V

Published :

2011

Drain Current-Max (Abs) (ID) :

120A

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

1135A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Avalanche Energy Rating (Eas) :

913 mJ

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation-Max :

338W Tc

Drain-source On Resistance-Max :

0.0022Ohm

Terminal Position :

Single

Number of Elements :

1

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 25A, 10V

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Factory Lead Time :

20 Weeks

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

4V @ 1mA

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

9997pF @ 30V

Gate Charge (Qg) (Max) @ Vgs :

137nC @ 10V

Packaging :

Tube

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3