PSMN003-30P,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchMOS™

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

500 mJ

FET Type :

N-Channel

Rise Time :

66ns

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Published :

2001

Turn-Off Delay Time :

210 ns

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 1mA

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Vgs (Max) :

±20V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

230W

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mount :

Through Hole

Lead Free :

Lead Free

HTS Code :

8541.29.00.75

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

75A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Radiation Hardening :

No

Package / Case :

TO-220-3

Power Dissipation-Max :

230W Tc

Drain to Source Breakdown Voltage :

30V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Case Connection :

DRAIN

ECCN Code :

EAR99

Packaging :

Tube

Drain-source On Resistance-Max :

0.004ohm

Turn On Delay Time :

33 ns

Fall Time (Typ) :

115 ns

Pulsed Drain Current-Max (IDM) :

400A