PSMN003-30P,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

HTS Code :

8541.29.00.75

Package / Case :

TO-220-3

Rise Time :

66ns

Operating Temperature :

-55°C~175°C TJ

Series :

TrenchMOS™

Mount :

Through Hole

Power Dissipation :

230W

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.004ohm

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Turn On Delay Time :

33 ns

Number of Terminations :

3

Number of Elements :

1

Turn-Off Delay Time :

210 ns

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Pins :

3

Vgs (Max) :

±20V

FET Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

3V @ 1mA

Packaging :

Tube

Pin Count :

3

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Published :

2001

Power Dissipation-Max :

230W Tc

ECCN Code :

EAR99

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

400A

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

500 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

115 ns

Continuous Drain Current (ID) :

75A