PSMN003-30P,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

3V @ 1mA

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Element Configuration :

Single

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Turn On Delay Time :

33 ns

Published :

2001

Rise Time :

66ns

ECCN Code :

EAR99

Power Dissipation-Max :

230W Tc

Number of Pins :

3

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.004ohm

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

115 ns

Case Connection :

DRAIN

JESD-609 Code :

e3

Series :

TrenchMOS™

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

400A

Turn-Off Delay Time :

210 ns

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

HTS Code :

8541.29.00.75

Pin Count :

3

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Avalanche Energy Rating (Eas) :

500 mJ

Radiation Hardening :

No

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

75A

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation :

230W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1