PSMN005-75B,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Elements :

1

Drain-source On Resistance-Max :

0.005ohm

Qualification Status :

Not Qualified

Power Dissipation-Max :

230W Tc

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Drain to Source Voltage (Vdss) :

75V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

400A

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

8250pF @ 25V

FET Type :

N-Channel

Published :

2001

HTS Code :

8541.29.00.75

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

12 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

75V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

75A

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

ECCN Code :

EAR99

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

500 mJ