PSMN005-75B,118
- Mfr.Part #
- PSMN005-75B,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A D2PAK
- Stock
- 89
- In Stock :
- 89
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.005ohm
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 25A, 10V
- Drain to Source Voltage (Vdss) :
- 75V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- HTS Code :
- 8541.29.00.75
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Case Connection :
- DRAIN
- Series :
- TrenchMOS™
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- DS Breakdown Voltage-Min :
- 75V
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 8250pF @ 25V
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 400A
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2001
- Power Dissipation-Max :
- 230W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Drain Current-Max (Abs) (ID) :
- 75A
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- PSMN005-75B,118

N-Channel Tape & Reel (TR) 5m Ω @ 25A, 10V ±20V 8250pF @ 25V 165nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN005-75B,118 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8250pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [75A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 75V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
PSMN005-75B,118 Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 400A.
a 75V drain to source voltage (Vdss)
PSMN005-75B,118 Applications
There are a lot of Nexperia USA Inc.
PSMN005-75B,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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