PSMN005-75P,127
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- Mfr.Part #
- PSMN005-75P,127
- Manufacturer
- Nexperia
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A TO220AB
- Stock
- 39,188
- In Stock ：
- 39,188
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 8250pF @ 25V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 25A, 10V
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Fall Time (Typ) :
- 74 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 1997
- Turn On Delay Time :
- 37 ns
- Rise Time :
- 73ns
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Drain to Source Breakdown Voltage :
- 75V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Pulsed Drain Current-Max (IDM) :
- 400A
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 230W Tc
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Max Dual Supply Voltage :
- 75V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Series :
- TrenchMOS™
- Continuous Drain Current (ID) :
- 75A
- Power Dissipation :
- 230W
- Turn-Off Delay Time :
- 144 ns
- HTS Code :
- 8541.29.00.75
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.005ohm
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PSMN005-75P,127
N-Channel Tube 5m Ω @ 25A, 10V ±20V 8250pF @ 25V 165nC @ 10V TO-220-3
PSMN005-75P,127 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=75V. And this device has 75V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 144 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 37 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 75V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
PSMN005-75P,127 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 144 ns
based on its rated peak drain current 400A.
PSMN005-75P,127 Applications
There are a lot of Nexperia USA Inc.
PSMN005-75P,127 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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