PSMN005-75P,127
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- Mfr.Part #
- PSMN005-75P,127
- Manufacturer
- Nexperia
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A TO220AB
- Stock
- 39,188
- In Stock ：
- 39,188
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Factory Lead Time :
- 12 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 230W
- Fall Time (Typ) :
- 74 ns
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Series :
- TrenchMOS™
- Turn-Off Delay Time :
- 144 ns
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 8250pF @ 25V
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 400A
- Drain to Source Breakdown Voltage :
- 75V
- Power Dissipation-Max :
- 230W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Max Dual Supply Voltage :
- 75V
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Surface Mount :
- No
- Published :
- 1997
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- Drain-source On Resistance-Max :
- 0.005ohm
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 25A, 10V
- Turn On Delay Time :
- 37 ns
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 73ns
- Avalanche Energy Rating (Eas) :
- 500 mJ
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.29.00.75
- Continuous Drain Current (ID) :
- 75A
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Datasheets
- PSMN005-75P,127
N-Channel Tube 5m Ω @ 25A, 10V ±20V 8250pF @ 25V 165nC @ 10V TO-220-3
PSMN005-75P,127 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=75V. And this device has 75V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 144 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 37 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 75V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
PSMN005-75P,127 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 144 ns
based on its rated peak drain current 400A.
PSMN005-75P,127 Applications
There are a lot of Nexperia USA Inc.
PSMN005-75P,127 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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