PSMN005-75P,127

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Mfr.Part #
PSMN005-75P,127
Manufacturer
Nexperia
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 75V 75A TO220AB
Stock
39,188
In Stock :
39,188

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
500 mJ
Package / Case :
TO-220-3
Vgs (Max) :
±20V
Factory Lead Time :
12 Weeks
Turn On Delay Time :
37 ns
Contact Plating :
Tin
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Case Connection :
DRAIN
Rise Time :
73ns
Rds On (Max) @ Id, Vgs :
5m Ω @ 25A, 10V
Max Dual Supply Voltage :
75V
Element Configuration :
Single
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
8250pF @ 25V
Drain-source On Resistance-Max :
0.005ohm
Lead Free :
Lead Free
Fall Time (Typ) :
74 ns
Power Dissipation-Max :
230W Tc
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Vgs(th) (Max) @ Id :
4V @ 1mA
Power Dissipation :
230W
Pin Count :
3
Pulsed Drain Current-Max (IDM) :
400A
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Published :
1997
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e3
Number of Pins :
3
Turn-Off Delay Time :
144 ns
Continuous Drain Current (ID) :
75A
Number of Elements :
1
Surface Mount :
No
HTS Code :
8541.29.00.75
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
75V
Series :
TrenchMOS™
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Datasheets
PSMN005-75P,127
Introducing Transistors - FETs, MOSFETs - Single Nexperia PSMN005-75P,127 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, PSMN005-75P,127 pinout, PSMN005-75P,127 datasheet PDF, PSMN005-75P,127 amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia PSMN005-75P,127 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PSMN005-75P,127


N-Channel Tube 5m Ω @ 25A, 10V ±20V 8250pF @ 25V 165nC @ 10V TO-220-3

PSMN005-75P,127 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=75V. And this device has 75V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 144 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 37 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 75V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.

PSMN005-75P,127 Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 144 ns
based on its rated peak drain current 400A.


PSMN005-75P,127 Applications


There are a lot of Nexperia USA Inc.
PSMN005-75P,127 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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