PSMN004-36B,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

120 mJ

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain to Source Voltage (Vdss) :

36V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

TrenchMOS™

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

75A

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

240A

Published :

2001

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

36V

Pin Count :

3

Terminal Form :

Gull wing

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 1mA

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0054Ohm

JESD-609 Code :

e3

Terminal Position :

Single

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

230W Tc

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED