PSMN006-20K,518

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 2.5V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0082Ohm

Vgs(th) (Max) @ Id :

700mV @ 1mA

DS Breakdown Voltage-Min :

20V

Series :

TrenchMOS™

Pulsed Drain Current-Max (IDM) :

60A

ECCN Code :

EAR99

Terminal Position :

Dual

JEDEC-95 Code :

MS-012AA

FET Type :

N-Channel

Power Dissipation-Max :

8.3W Tc

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 20V

Published :

1997

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Rds On (Max) @ Id, Vgs :

5m Ω @ 5A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

JESD-30 Code :

R-PDSO-G8

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±10V

Pin Count :

8

Number of Terminations :

8

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.75

Additional Feature :

LOW THRESHOLD

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

JESD-609 Code :

e4

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain Current-Max (Abs) (ID) :

32A

Terminal Finish :

NICKEL PALLADIUM GOLD

Configuration :

SINGLE WITH BUILT-IN DIODE