PSMN004-60B,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 25A, 10V

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

400A

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Continuous Drain Current (ID) :

75A

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE

HTS Code :

8541.29.00.75

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

168nC @ 10V

FET Type :

N-Channel

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

8300pF @ 25V

Surface Mount :

yes

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

60V

Avalanche Energy Rating (Eas) :

500 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

230W Tc

Series :

TrenchMOS™

Published :

2009