PSMN005-75B,118
- Mfr.Part #
- PSMN005-75B,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- N-CHANNEL TRENCHMOS SILICONMAX S
- Stock
- 89
- In Stock :
- 89
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 8250pF @ 25V
- Drain-source On Resistance-Max :
- 0.005ohm
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 25A, 10V
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 230W Tc
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Drain Current-Max (Abs) (ID) :
- 75A
- DS Breakdown Voltage-Min :
- 75V
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Drain to Source Voltage (Vdss) :
- 75V
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Terminal Position :
- Single
- Published :
- 2001
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- HTS Code :
- 8541.29.00.75
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- TrenchMOS™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 400A
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Datasheets
- PSMN005-75B,118

N-Channel Tape & Reel (TR) 5m Ω @ 25A, 10V ±20V 8250pF @ 25V 165nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN005-75B,118 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8250pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [75A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 75V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
PSMN005-75B,118 Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 400A.
a 75V drain to source voltage (Vdss)
PSMN005-75B,118 Applications
There are a lot of Nexperia USA Inc.
PSMN005-75B,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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