PSMN008-75B,118
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- Mfr.Part #
- PSMN008-75B,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A D2PAK
- Stock
- 5,758
- In Stock ：
- 5,758
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.0085Ohm
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 75A
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 25A, 10V
- Rise Time :
- 55ns
- Pulsed Drain Current-Max (IDM) :
- 240A
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Mounting Type :
- Surface Mount
- Published :
- 2009
- JESD-609 Code :
- e3
- HTS Code :
- 8541.29.00.75
- Max Dual Supply Voltage :
- 75V
- FET Type :
- N-Channel
- Power Dissipation :
- 230W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Series :
- TrenchMOS™
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 230W Tc
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 5260pF @ 25V
- Drain to Source Breakdown Voltage :
- 75V
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 18 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 88 ns
- Fall Time (Typ) :
- 80 ns
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 122.8nC @ 10V
- Datasheets
- PSMN008-75B,118
N-Channel Tape & Reel (TR) 8.5m Ω @ 25A, 10V ±20V 5260pF @ 25V 122.8nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN008-75B,118 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 75V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 75V.As a result of its turn-off delay time, which is 88 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 240A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 75V.In addition to reducing power consumption, this device uses drive voltage (10V).
PSMN008-75B,118 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 240A.
PSMN008-75B,118 Applications
There are a lot of Nexperia USA Inc.
PSMN008-75B,118 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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