PSMN008-75B,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Terminations :

2

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Pins :

3

Turn On Delay Time :

18 ns

Drain to Source Breakdown Voltage :

75V

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

80 ns

Turn-Off Delay Time :

88 ns

FET Type :

N-Channel

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

75A

Series :

TrenchMOS™

Transistor Element Material :

SILICON

Pin Count :

3

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

122.8nC @ 10V

Rise Time :

55ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

5260pF @ 25V

HTS Code :

8541.29.00.75

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0085Ohm

Published :

2009

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 25A, 10V

Max Dual Supply Voltage :

75V

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

240A

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

230W Tc

JESD-609 Code :

e3

Case Connection :

DRAIN

Power Dissipation :

230W

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ