PSMN005-55P,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55V

Qualification Status :

Not Qualified

Pin Count :

3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

230W Tc

Vgs(th) (Max) @ Id :

2V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 25A, 10V

Pulsed Drain Current-Max (IDM) :

240A

ECCN Code :

EAR99

Surface Mount :

No

Vgs (Max) :

±15V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

55V

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

75A

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 25V

FET Type :

N-Channel

Series :

TrenchMOS™

Terminal Position :

Single

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

103nC @ 5V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain-source On Resistance-Max :

0.0067Ohm

Avalanche Energy Rating (Eas) :

268 mJ

RoHS Status :

ROHS3 Compliant

Published :

1998