PD57060S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Type :

LDMOS

Number of Pins :

3

Number of Elements :

1

Gain :

14.3dB

Voltage - Test :

28V

Max Output Power :

60W

ECCN Code :

EAR99

Packaging :

Tube

Continuous Drain Current (ID) :

7A

Voltage - Rated DC :

65V

JESD-609 Code :

e3

Max Operating Temperature :

165°C

Additional Feature :

High Reliability

Frequency :

945MHz

Drain Current-Max (Abs) (ID) :

7A

Radiation Hardening :

No

Current Rating :

7A

Package / Case :

PowerSO-10 Exposed Bottom Pad

Transistor Application :

AMPLIFIER

Drain to Source Breakdown Voltage :

65V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

SOURCE

Element Configuration :

Single

Factory Lead Time :

25 Weeks

Operating Mode :

ENHANCEMENT MODE

Min Operating Temperature :

-65°C

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

250

Polarity/Channel Type :

N-Channel

Pin Count :

10

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Base Part Number :

PD57060

JESD-30 Code :

R-PDSO-F2

Power Dissipation :

79W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Max Power Dissipation :

79W

Drain to Source Voltage (Vdss) :

65V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Terminations :

2

Mount :

Surface Mount

Current - Test :

100mA